Surface and subsurface induced morphology and electronic structure of clean reconstructed Si(111) 7x7 after low energy argon ion irradiation is investigated. We observed electron emission enhancement in the three surface and Si Sp3 hybridisation bulk states in the un-irradiated sample as a function of ultra-violet photoemission spectroscopy tilt angle, contrary to that of the intermediate and secondary electron cut off bulk states. Upon ion irradiation at different geometries of the reconstructed surfaces, band states attenuation and features such as ripples and nanoparticles are developed. The density of Si vacancy defects was found to be sample irradiation tilt angle dependent with average g factor value of 2.006. It is demonstrated that ripples and nanoparticles can be qualitatively correlated to the curvature and the energy shift of the intermediate electronic bulk band in the ultra-low energy argon ion irradiation regime.