RHEED and XPS studies of epitaxial Co thin film on GaAs (100), (111)A, (111)B and on Si (100) and (111).
Author
Al-Busaidiyah, Zakia Nasser.
English abstract
In this study Molecular Beam Epitaxy technique was used for growing epitaxial thin film of Cobalt on GaAs(100), (111)A, (111)B and on Si(100), (111) surfaces. Before the epitaxial growth of the thin film, the substrates were cleaned to remove any surface contamination by using thermal and Atomic Hydrogen Cleaning methods. RHEED and XPS techniques were used to monitor and analyses the surfaces. It is found that the Atomic Hydrogen Cleaning is better than thermal cleaning. This study also shows that it can produced an epitaxial thin film of Cobalt and produced layer by layer growth mode at high substrate temperature on some substrates surfaces such as GaAs(111)A and Si(111), while other substrates produced rough surfaces.
